Parametric results for: PSMN1R2-25YL%2C115 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2 HIGH RELIABILITY, ULTRA LOW RESISTANCE 1 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2

11 hits Apply

178.0 mJ 3 677.0 mJ 4 1293.0 mJ 2

Min (mJ) - Max (mJ)

11 hits Apply

DRAIN 9

11 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 9

11 hits Apply

DS Breakdown Voltage-Min (1)

25 V 9

11 hits Apply

Drain Current-Max (ID) (2)

100 A 9 230 A 1

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (3)

1.69 mΩ 2 1.7 mΩ 3 1.85 mΩ 4

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

11 hits Apply

292 pF 1

11 hits Apply

MO-235 5

11 hits Apply

R-PSSO-G4 9

11 hits Apply

e3 10

11 hits Apply

Manufacturer (2)

Nexperia 6 NXP Semiconductors 5

11 hits Apply

1 10

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

4 9

11 hits Apply

ENHANCEMENT MODE 10

11 hits Apply

150.0 °C 4 175.0 °C 2

Min (°C) - Max (°C)

11 hits Apply

-55.0 °C 1

11 hits Apply

PLASTIC/EPOXY 9

11 hits Apply

RECTANGULAR 9

11 hits Apply

SMALL OUTLINE 9

11 hits Apply

Active 6 Transferred 5

11 hits Apply

Yes 1

11 hits Apply

260 9 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

11 hits Apply

121 W 2 172 W 1 179 W 1

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 10

11 hits Apply