Parametric results for: RN231R under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 10 1 BUILT-IN BIAS RESISTOR 12 BUILT-IN BIAS RESISTOR RATIO IS 0.1 3 BUILT-IN BIAS RESISTOR RATIO IS 0.22 3 BUILT-IN BIAS RESISTOR RATIO IS 0.47 3 BUILT-IN BIAS RESISTOR RATIO IS 2.13 3 BUILT-IN BIAS RESISTOR RATIO IS 4.7 3 BUILT-IN RESISTOR RATIO IS 0.21 1 BUILT-IN RESISTOR RATIO IS 0.47 1 BUILT-IN RESISTOR RATIO IS 10 1 BUILT-IN RESISTOR RATIO IS 2.13 1 BUILT-IN RESISTOR RATIO IS 4.55 1

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Collector Current-Max (IC) (1)

100 mA 46

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6 pF 7

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Collector-Emitter Voltage-Max (1)

50 V 37

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Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN RESISTOR 35

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DC Current Gain-Min (hFE) (3)

30.0 5 50.0 21 120.0 20

Min - Max

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R-PDSO-G3 37

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Manufacturer (1)

Toshiba America Electronic Components 56

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Number of Elements (1)

1 46

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Number of Terminals (1)

3 37

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150.0 °C 9

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PLASTIC/EPOXY 37

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RECTANGULAR 37

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SMALL OUTLINE 37

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Active 25 Not Recommended 2 Obsolete 29

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No 7 Yes 1

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NOT SPECIFIED 23

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Polarity/Channel Type (1)

PNP 46

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100 mW 18

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Surface Mount (1)

YES 46

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Transition Frequency-Nom (fT) (1)

200 MHz 37

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