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Parametric results for: S29GL256S90FHA020 under Flash Memories

Select parts from the table below to compare.

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Select Parts		Part Number

		S29GL256S90FHA020 Cypress Semiconductor
		S29GL256S90FHA020 Infineon Technologies AG

			Most Relevant						Technical																										Compliance		Operating Conditions						Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Boot Block	Command User Interface	Common Flash Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Reach Compliance Code	ECCN Code	HTS Code	Date Of Intro

Check for Price

Yes

Transferred

268.4355 Mbit

16

16MX16

3 V

90 ns

FLASH

BOTTOM/TOP

1

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

PARALLEL

3 V

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B64

e1

3

85 °C

-40 °C

260

AEC-Q100

30

64

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

2017-05-03

Check for Price

Yes

Active

268.4355 Mbit

16

128K

16MX16

3 V

90 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

YES

YES

2

100000 Write/Erase Cycles

1

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

R-PBGA-B64

e1

3

85 °C

-40 °C

260

AEC-Q100; TS 16949

30

64

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INFINEON TECHNOLOGIES AG

compliant

Compare

S29GL256S90FHA020

Cypress Semiconductor

Check for Price

Yes

Transferred

268.4355 Mbit

16

16MX16

3 V

90 ns

FLASH

BOTTOM/TOP

1

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

PARALLEL

3 V

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B64

e1

3

85 °C

-40 °C

260

AEC-Q100

30

64

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

2017-05-03

S29GL256S90FHA020

Infineon Technologies AG

Check for Price

Yes

Active

268.4355 Mbit

16

128K

16MX16

3 V

90 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

YES

YES

2

100000 Write/Erase Cycles

1

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

R-PBGA-B64

e1

3

85 °C

-40 °C

260

AEC-Q100; TS 16949

30

64

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INFINEON TECHNOLOGIES AG

compliant