Parametric results for: UPD421000C-10 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 2

4 hits Apply

Access Time-Max (1)

100 ns 4

4 hits Apply

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH 2

4 hits Apply

SEPARATE 2

4 hits Apply

R-PDIP-T18 4

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

NEC Electronics America Inc 2 Renesas Electronics Corporation 2

4 hits Apply

Memory Density (1)

1.0486 Mbit 4

4 hits Apply

FAST PAGE DRAM 4

4 hits Apply

Memory Width (1)

1 4

4 hits Apply

1.0 2

4 hits Apply

1 2

4 hits Apply

18 4

4 hits Apply

1.0486 M 4

4 hits Apply

1000000.0 4

4 hits Apply

ASYNCHRONOUS 2

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

1MX1 4

4 hits Apply

3-STATE 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

DIP 4

4 hits Apply

DIP18,.3 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Refresh Cycles (1)

512 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply