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X28HC256JI-12T7
Intersil Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 100 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | INTERSIL CORP | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||||
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X28HC256JI-12
Intersil Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | NO | YES | 100 | 1000000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 128 words | PARALLEL | 5 V | 500 µA | 60 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 240 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTERSIL CORP | QFJ | QCCJ, LDCC32,.5X.6 | 32 | not_compliant | EAR99 | 8542.32.00.51 | ||||||
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X28HC256JI-12T1
Xicor Inc
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Check for Price | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 100 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | XICOR INC | QCCJ, | unknown | |||||||||||||||||||||||
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X28HC256JI-12
Xicor Inc
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Check for Price | No | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | NO | YES | 100 | 1000000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | 128 words | PARALLEL | 5 V | 500 µA | 60 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | XICOR INC | QCCJ, LDCC32,.5X.6 | unknown | |||||||||||||
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X28HC256JI-12T13
Renesas Electronics Corporation
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Check for Price | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | RENESAS ELECTRONICS CORP | LCC-32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||||||||||||||
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X28HC256JI-12T2
Xicor Inc
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Check for Price | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 100 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | XICOR INC | QCCJ, | unknown | ||||||||||||||||||||||||
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X28HC256JI-12
Renesas Electronics Corporation
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | RENESAS ELECTRONICS CORP | PLCC | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 | N32.45X55 | Renesas Electronics | ||||||||||||||||||
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X28HC256JI-12T1
Intersil Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | NO | YES | 100 | 1000000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 128 words | PARALLEL | 5 V | 500 µA | 60 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTERSIL CORP | QFJ | QCCJ, LDCC32,.5X.6 | 32 | not_compliant | EAR99 | 8542.32.00.51 | ||||||||
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X28HC256JI-12T
Intersil Corporation
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Check for Price | Transferred | EEPROM | 5 V | INTERSIL CORP | , | compliant | EAR99 | 8542.32.00.51 | 2017-10-31 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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X28HC256JI-12T
Renesas Electronics Corporation
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Check for Price | Active | EEPROM | 5 V | RENESAS ELECTRONICS CORP | , | compliant | EAR99 | 8542.32.00.51 |