Parametric results for: fmw10 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT)

826.0 mJ 2

4 hits Apply

Collector Current-Max (IC) (1)

50 mA 2

4 hits Apply

1.6 pF 2

4 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 2

4 hits Apply

Configuration (2)

COMMON EMITTER, 2 ELEMENTS 2 SINGLE 2

4 hits Apply

DC Current Gain-Min (hFE) (1)

27.0 2

4 hits Apply

DS Breakdown Voltage-Min (1)

900 V 2

4 hits Apply

Drain Current-Max (ID) (1)

10 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

1.4 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

TO-247AA 2

4 hits Apply

R-PDSO-G5 1 R-PDSO-G6 1 R-PSFM-T3 2

4 hits Apply

Manufacturer (2)

Fuji Electric Co Ltd 2 ROHM Semiconductor 2

4 hits Apply

Number of Elements (2)

1 2 2 2

Min - Max

4 hits Apply

Number of Terminals (3)

3 2 5 1 6 1

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 2 SMALL OUTLINE 2

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 2 NPN 2

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply

Transition Frequency-Nom (fT) (1)

1.5 GHz 2

4 hits Apply