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K4D26323AA-GL500
Samsung Semiconductor
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Check for Price | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | 144 | PLASTIC/EPOXY | LFBGA | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, | 144 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||
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K4D26323AA-GL45
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 700 ps | 222 MHz | 4096 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 55 mA | 690 µA | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | e0 | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA144,12X12,32 | 144 | compliant | EAR99 | 8542.32.00.02 | ||
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K4D26323AA-GL400
Samsung Semiconductor
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Check for Price | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 600 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | 144 | PLASTIC/EPOXY | LFBGA | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, | 144 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||
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K4D26323AA-GL40
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 600 ps | 250 MHz | 4096 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 55 mA | 760 µA | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | e0 | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA144,12X12,32 | 144 | compliant | EAR99 | 8542.32.00.02 | ||
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K4D26323AA-GL450
Samsung Semiconductor
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Check for Price | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | 144 | PLASTIC/EPOXY | LFBGA | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, | 144 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||
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K4D26323AA-GL50
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 700 ps | 200 MHz | 4096 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 55 mA | 635 µA | 2.625 V | 2.375 V | CMOS | S-PBGA-B144 | Not Qualified | e0 | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA144,12X12,32 | 144 | compliant | EAR99 | 8542.32.00.02 |