Verical Authorized Distributor
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
BSP299H6327XUSA1
DISTI #
91939250
|
Infineon Technologies AG | Trans MOSFET N-CH 500V 0.4A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 743 Package Multiple: 1 Date Code: 2101 BSP299H6327XUSA1 Part Details | Americas - 98500 |
|
$0.3481 / $0.5054 | Buy Now BSP299H6327XUSA1 Part Details |
Bristol Electronics
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | Trans MOSFET N-CH 500V 0.4A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 BSP299E6327 Part Details | 858 | RFQ BSP299E6327 Part Details |
Rochester Electronics ECIA (NEDA) Member Authorized Distributor
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | SIPMOS Small-Signal N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 BSP299H6327XUSA1 Part Details | 98500 |
|
$0.2785 / $0.4492 | Buy Now BSP299H6327XUSA1 Part Details |
Quest Components
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 0.4A I(D), 500V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: BSP299H6327) BSP299H6327XUSA1 Part Details | 945 |
|
$1.0350 / $2.2500 | Buy Now BSP299H6327XUSA1 Part Details | |
| Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 0.4A I(D), 500V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET BSP299H6327XUSA1 Part Details | 945 |
|
$1.0350 / $2.2500 | Buy Now BSP299H6327XUSA1 Part Details |
Chip 1 Exchange
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Siemens | INSTOCK BSP299E6433 Part Details | 1180 | RFQ BSP299E6433 Part Details | |||
| Siemens | INSTOCK BSP299 Part Details | 225 | RFQ BSP299 Part Details |
Win Source Electronics
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | BSP299 H6327 Part Details | 12000 |
|
$2.6078 / $3.9116 | Buy Now BSP299 H6327 Part Details | |
| Infineon Technologies AG | MOSFET N-CH 500V 0.4A SOT-223 BSP299H6327XUSA1 Part Details | 11230 |
|
$2.6078 / $3.9116 | Buy Now BSP299H6327XUSA1 Part Details |
Chip Stock
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | Trans MOSFET N-CH 500V 0.4A 4-Pin(3+Tab) SOT-223 T/R BSP299L6327 Part Details | 15499 | RFQ BSP299L6327 Part Details | |||
| Infineon Technologies AG | Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R BSP299H6327 Part Details | 15052 | RFQ BSP299H6327 Part Details | |||
| Infineon Technologies AG | Mosfet N-ch 500V 400MA SOT-223 BSP299E6327 Part Details | 15052 | RFQ BSP299E6327 Part Details | |||
| Infineon Technologies AG | Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R BSP299H6327XUSA1 Part Details | 14300 | RFQ BSP299H6327XUSA1 Part Details |
Unikey Electronic Pte Ltd
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| VBsemi Electronics Co Ltd | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。SOT223;NChannel;VDS=650V;ID =2A;RDS(ON)=4000mΩ@VGS=10V;RDS(ON)=5000mΩ@VGS=4.5V;VGS=±30V;Vth=3.5V;This model'sMOSFETCan be used in power switching circuits in solar inverters,Achieve effective conversion and management of solar energy。Its high withstand voltage characteristic makes it suitable for high voltage environments in solar power systems。 Min Qty: 25 Date Code: 26+ BSP299-VB Part Details | 400000 |
|
$0.2187 / $0.2377 | Buy Now BSP299-VB Part Details |
Vyrian
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP299H6327XUSA1 Part Details | 10734 | RFQ BSP299H6327XUSA1 Part Details | |||
| Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP299L6327HUSA1 Part Details | 7840 | RFQ BSP299L6327HUSA1 Part Details | |||
| Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP299H6327 Part Details | 578 | RFQ BSP299H6327 Part Details |