Datasheets
AS4C32M16D2-25BCN by:

DDR DRAM, 32MX16, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84

Part Details for AS4C32M16D2-25BCN by Alliance Memory Inc

Overview of AS4C32M16D2-25BCN by Alliance Memory Inc

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Price & Stock for AS4C32M16D2-25BCN

Part # Distributor Description Stock Price Buy
DISTI # 913-AS4C32M16D225BCN
Mouser Electronics DRAM 512M, 1.8V, 32M x 16 DDR2 RoHS: Compliant 0
Order Now
Karl Kruse GmbH & Co KG DDR2 512Mb 32M x 16 1.8V 84-ball BGA 400 MHz Commercial Temp 3365
RFQ
Chip1Cloud IC DRAM 512M PARALLEL 84FBGA 1580
RFQ

Part Details for AS4C32M16D2-25BCN

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AS4C32M16D2-25BCN Part Data Attributes:

AS4C32M16D2-25BCN Alliance Memory Inc
Buy Now Datasheet
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AS4C32M16D2-25BCN Alliance Memory Inc DDR DRAM, 32MX16, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Width 8 mm

Alternate Parts for AS4C32M16D2-25BCN

This table gives cross-reference parts and alternative options found for AS4C32M16D2-25BCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C32M16D2-25BCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C32M16D2-25BIN DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Alliance Memory Inc AS4C32M16D2-25BCN vs AS4C32M16D2-25BIN
Part Number Description Manufacturer Compare
M14D5121632A-2.5BBIG2A DDR DRAM, Elite Semiconductor Memory Technology Inc AS4C32M16D2-25BCN vs M14D5121632A-2.5BBIG2A
IS43DR16320E-25DBL DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Integrated Silicon Solution Inc AS4C32M16D2-25BCN vs IS43DR16320E-25DBL
K4T51163QN-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor AS4C32M16D2-25BCN vs K4T51163QN-BCF70
M14D5121632A-2.5BIAG2A DDR DRAM, Elite Semiconductor Memory Technology Inc AS4C32M16D2-25BCN vs M14D5121632A-2.5BIAG2A
NT5TU32M16EG-ACA DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84 Nanya Technology Corporation AS4C32M16D2-25BCN vs NT5TU32M16EG-ACA
K4T51163QN-BCE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor AS4C32M16D2-25BCN vs K4T51163QN-BCE70
IS43DR16320C-25DBLI-TR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc AS4C32M16D2-25BCN vs IS43DR16320C-25DBLI-TR
MT47H32M16NF-25EAAT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc AS4C32M16D2-25BCN vs MT47H32M16NF-25EAAT:H
IS46DR16320C-25DBLA1-TR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc AS4C32M16D2-25BCN vs IS46DR16320C-25DBLA1-TR
NT5TU32M16EG-ACT DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, VFBGA-84 Nanya Technology Corporation AS4C32M16D2-25BCN vs NT5TU32M16EG-ACT

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