Part Details for IXFA20N50P3 by IXYS Corporation
Overview of IXFA20N50P3 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Motor control systems
Price & Stock for IXFA20N50P3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXFA20N50P3
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Mouser Electronics | MOSFET Polar3 HiPerFET Power MOSFET RoHS: Compliant | 0 |
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$3.0700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$2.6200 | Buy Now |
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DISTI #
IXFA20N50P3
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TTI | MOSFET Polar3 HiPerFET Power MOSFET Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.3800 / $3.0400 | Buy Now |
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DISTI #
IXFA20N50P3
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TME | Transistor: N-MOSFET, unipolar, 500V, 20A, 380W, TO263 Min Qty: 1 | 29 |
|
$2.5200 / $3.1200 | Buy Now |
Part Details for IXFA20N50P3
IXFA20N50P3 CAD Models
IXFA20N50P3 Part Data Attributes:
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IXFA20N50P3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFA20N50P3
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263AA, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 380 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA20N50P3
This table gives cross-reference parts and alternative options found for IXFA20N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA20N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFP20N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA20N50P3 vs IXFP20N50P3 |
| FMC20N50ES | Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | IXFA20N50P3 vs FMC20N50ES |
| IRF460PBF | Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IXFA20N50P3 vs IRF460PBF |
| IXFQ20N50P3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXFA20N50P3 vs IXFQ20N50P3 |
| IXFP20N50P3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | IXFA20N50P3 vs IXFP20N50P3 |
| IXFQ20N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA20N50P3 vs IXFQ20N50P3 |
| IXFA20N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA20N50P3 vs IXFA20N50P3 |
| IXFH20N50P3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXFA20N50P3 vs IXFH20N50P3 |
| FMC20N50E | Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | IXFA20N50P3 vs FMC20N50E |