Part Details for SIHD12N50E-GE3 by Vishay Intertechnologies
Overview of SIHD12N50E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for SIHD12N50E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43Y2396
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Newark | Mosfet, N-Ch, 500V, 10.5A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:10.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay SIHD12N50E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.1800 / $1.9300 | Buy Now |
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DISTI #
SIHD12N50E-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.7830 / $0.9947 | Buy Now |
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DISTI #
78-SIHD12N50E-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 5007 |
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$0.7250 / $1.7300 | Buy Now |
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Future Electronics | Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.7350 / $0.7950 | Buy Now |
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DISTI #
SIHD12N50E-GE3
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TTI | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 3000 In Stock |
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$0.7300 / $1.1800 | Buy Now |
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DISTI #
SIHD12N50E-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.7830 / $0.9947 | Buy Now |
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DISTI #
SIHD12N50E-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 6.6A, Idm: 21A, 114W Min Qty: 1 | 0 |
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$1.0200 / $1.5300 | RFQ |
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DISTI #
SIHD12N50E-GE3
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EBV Elektronik | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK (Alt: SIHD12N50E-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 550V 10.5A 380m10V6A 114W 4V250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS | 1 |
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$1.0844 / $1.5930 | Buy Now |
Part Details for SIHD12N50E-GE3
SIHD12N50E-GE3 CAD Models
SIHD12N50E-GE3 Part Data Attributes:
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SIHD12N50E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD12N50E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 103 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 10.5 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 114 W | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 82 ns | |
| Turn-on Time-Max (ton) | 58 ns |
Alternate Parts for SIHD12N50E-GE3
This table gives cross-reference parts and alternative options found for SIHD12N50E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD12N50E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP60R385CPXKSA1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD12N50E-GE3 vs IPP60R385CPXKSA1 |
| IPB65R420CFD | Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | SIHD12N50E-GE3 vs IPB65R420CFD |
| 2N7306 | Power Field-Effect Transistor, 12A I(D), 500V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA | Harris Semiconductor | SIHD12N50E-GE3 vs 2N7306 |
| SPP12N50C3XKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD12N50E-GE3 vs SPP12N50C3XKSA1 |
| IXFT12N50F | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | SIHD12N50E-GE3 vs IXFT12N50F |
| IPI60R385CPXKSA1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SIHD12N50E-GE3 vs IPI60R385CPXKSA1 |