BAS29212 vs BAS29,215 feature comparison

BAS29212 NXP Semiconductors

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BAS29,215 Nexperia

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Part Life Cycle Code Active Active
Ihs Manufacturer NXP SEMICONDUCTORS NEXPERIA
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
HTS Code 8541.10.00.70
Date Of Intro 1991-04-01
Samacsys Manufacturer Nexperia
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Output Current-Max 0.25 A
Peak Reflow Temperature (Cel) 260
Reference Standard IEC-60134
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare BAS29212 with alternatives

Compare BAS29,215 with alternatives