BZX584C5V1-V-G-08 vs TPD6E001RSFR feature comparison

BZX584C5V1-V-G-08 Vishay Semiconductors

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TPD6E001RSFR Texas Instruments

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY SEMICONDUCTORS TEXAS INSTRUMENTS INC
Package Description R-PDSO-F2 QFN-12
Pin Count 2 12
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.80
Samacsys Manufacturer Vishay Texas Instruments
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 40 Ω
JESD-30 Code R-PDSO-F2 S-PQFP-N12
Number of Elements 1 1
Number of Terminals 2 12
Operating Temperature-Max 150 °C 85 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE FLATPACK
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 5.1 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Form FLAT NO LEAD
Terminal Position DUAL QUAD
Voltage Tol-Max 5%
Working Test Current 5 mA
Base Number Matches 2 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code QFN
Breakdown Voltage-Min 11 V
Clamping Voltage-Max 15 V
JEDEC-95 Code MO-220WGGB
JESD-609 Code e4
Moisture Sensitivity Level 1
Operating Temperature-Min -40 °C
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 5.5 V
Reverse Current-Max 0.001 µA
Terminal Finish NICKEL PALLADIUM GOLD
Time@Peak Reflow Temperature-Max (s) 30

Compare BZX584C5V1-V-G-08 with alternatives

Compare TPD6E001RSFR with alternatives