ESD9LFN5.0-H vs TPD1E05U06DPYR feature comparison

ESD9LFN5.0-H Formosa Microsemi Co Ltd

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TPD1E05U06DPYR Texas Instruments

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD TEXAS INSTRUMENTS INC
Package Description R-PDSO-N2 X1SON-2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.80
Breakdown Voltage-Min 6 V 6.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-N2 R-PBCC-N2
Non-rep Peak Rev Power Dis-Max 40 W 40 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 5 V 5.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL BOTTOM
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Samacsys Manufacturer Texas Instruments
Additional Feature ULTRA LOW CAPACITANCE
Breakdown Voltage-Max 8.5 V
Breakdown Voltage-Nom 7.5 V
Clamping Voltage-Max 10 V
JESD-609 Code e4
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.01 µA
Reverse Test Voltage 2.5 V
Terminal Finish NICKEL PALLADIUM GOLD
Time@Peak Reflow Temperature-Max (s) 30

Compare ESD9LFN5.0-H with alternatives

Compare TPD1E05U06DPYR with alternatives