ESD9LFN5.0-H vs VBUS051BD-HD1-GS08 feature comparison

ESD9LFN5.0-H Formosa Microsemi Co Ltd

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VBUS051BD-HD1-GS08 Vishay Semiconductors

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Part Life Cycle Code Contact Manufacturer Not Recommended
Ihs Manufacturer FORMOSA MICROSEMI CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-N2 R-PDSO-N2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 6 V 6.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-N2 R-PDSO-N2
Non-rep Peak Rev Power Dis-Max 40 W 45 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5 IEC-61000-4-2, 4-5
Rep Pk Reverse Voltage-Max 5 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Pin Count 2
Manufacturer Package Code LLP1006-2L
Samacsys Manufacturer Vishay
Additional Feature LOW LEAKAGE, LOW CAPACITANCE
Breakdown Voltage-Max 8.7 V
Breakdown Voltage-Nom 7.9 V
Clamping Voltage-Max 16 V
Forward Voltage-Max (VF) 4 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reverse Current-Max 0.1 µA
Reverse Test Voltage 5 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare ESD9LFN5.0-H with alternatives

Compare VBUS051BD-HD1-GS08 with alternatives