JAN1N6511 vs 1N6511 feature comparison

JAN1N6511 Microchip Technology Inc

Buy Now Datasheet

1N6511 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description DIP-14 HERMETIC SEALED, CERAMIC, DIP-14
Reach Compliance Code compliant compliant
Factory Lead Time 4 Weeks 22 Weeks
Breakdown Voltage-Max 75 V
Configuration SEPARATE, 7 ELEMENTS SEPARATE, 7 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDIP-T14 R-CDIP-T14
JESD-609 Code e0 e0
Number of Elements 7 7
Number of Terminals 14 14
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.6 W 0.6 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/474E
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 5
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1 V
Operating Temperature-Max 175 °C
Rep Pk Reverse Voltage-Max 65 V
Reverse Current-Max 0.025 µA
Reverse Recovery Time-Max 0.005 µs
Reverse Test Voltage 20 V

Compare JAN1N6511 with alternatives

Compare 1N6511 with alternatives