MT29F8G08ABABAWP-ITX:B
vs
W29N08GVBJAF
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
WINBOND ELECTRONICS CORP
|
Package Description |
TSOP-48
|
VFBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Samacsys Manufacturer |
Micron
|
Winbond
|
Data Polling |
NO
|
|
JESD-30 Code |
R-PDSO-G48
|
R-PBGA-B63
|
JESD-609 Code |
e3
|
|
Memory Density |
8589934592 bit
|
8589934592 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
63
|
Number of Words |
1073741824 words
|
1073741824 words
|
Number of Words Code |
1000000000
|
1000000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
105 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
1GX8
|
1GX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
BALL
|
Terminal Position |
DUAL
|
BOTTOM
|
Toggle Bit |
NO
|
|
Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
Base Number Matches |
1
|
1
|
Data Retention Time-Min |
|
10
|
Length |
|
11 mm
|
Package Code |
|
VFBGA
|
Package Equivalence Code |
|
BGA63,10X12,32
|
Package Style |
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Parallel/Serial |
|
PARALLEL
|
Programming Voltage |
|
3.3 V
|
Seated Height-Max |
|
1 mm
|
Standby Current-Max |
|
0.00005 A
|
Supply Current-Max |
|
0.035 mA
|
Supply Voltage-Max (Vsup) |
|
3.6 V
|
Supply Voltage-Min (Vsup) |
|
2.7 V
|
Terminal Pitch |
|
0.8 mm
|
Width |
|
9 mm
|
Write Cycle Time-Max (tWC) |
|
0.025 ms
|
|
|
|
Compare MT29F8G08ABABAWP-ITX:B with alternatives
Compare W29N08GVBJAF with alternatives