TS50P05GD2G vs TS50P05GC2 feature comparison

TS50P05GD2G Taiwan Semiconductor

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TS50P05GC2 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 50 A 50 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101; IEC-61000-4-2; UL RECOGNIZED AEC-Q101; IEC-61000-4-2; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10 10
Base Number Matches 1 1

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