Part Details for IXFV12N100PS by IXYS Corporation
Overview of IXFV12N100PS by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IXFV12N100PS
IXFV12N100PS CAD Models
IXFV12N100PS Part Data Attributes
|
|
IXFV12N100PS
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFV12N100PS
IXYS Corporation
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, PLUS220SMD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 463 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFV12N100PS
This table gives cross-reference parts and alternative options found for IXFV12N100PS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFV12N100PS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH12N100Q | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFV12N100PS vs IXFH12N100Q |
| IXFH12N100Q | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFV12N100PS vs IXFH12N100Q |
| IXFT12N90Q | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFV12N100PS vs IXFT12N90Q |
| IXFH12N100QS | Power Field-Effect Transistor, 12A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXYS Corporation | IXFV12N100PS vs IXFH12N100QS |
| IXFH12N90P | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFV12N100PS vs IXFH12N90P |
| APT1001R1BFLC | 11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Microsemi Corporation | IXFV12N100PS vs APT1001R1BFLC |
| IXFT12N90Q | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFV12N100PS vs IXFT12N90Q |
| IXFV12N90P | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN | IXYS Corporation | IXFV12N100PS vs IXFV12N90P |
| APT10086BVRG | Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFV12N100PS vs APT10086BVRG |
| APT1001RBLC | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | IXFV12N100PS vs APT1001RBLC |