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Transistors Power Field-Effect Transistors APT1001RBVFRG

APT1001RBVFRG
Description: Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Overview of APT1001RBVFRG by Microchip Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT1001RBVFRG by Microchip Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 78AH5543
Newark Fredfet Mos5 1000 V 1 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1001RBVFRG RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $15.3400
  • 100 $13.2200
  • 250 $12.7300
  • 500 $12.4300
$12.4300 / $15.3400 Buy Now
DISTI # APT1001RBVFRG-ND
DigiKey MOSFET N-CH 1000V 11A TO247 Min Qty: 40 Lead time: 32 Weeks Container: Tube Temporarily Out of Stock
  • 40 $15.3400
$15.3400 Buy Now
DISTI # APT1001RBVFRG
Avnet Americas Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT1001RBVFRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 32 Weeks, 0 Days Container: Tube 0
  • 1 $15.3400
  • 100 $13.2200
  • 250 $12.7300
  • 500 $12.4300
$12.4300 / $15.3400 Buy Now
DISTI # 494-APT1001RBVFRG
Mouser Electronics MOSFETs FREDFET MOS5 1000 V 1 Ohm TO-247 RoHS: Compliant 0
  • 1 $15.3400
  • 100 $13.2200
$13.2200 / $15.3400 Order Now
DISTI # APT1001RBVFRG
Microchip Technology Inc FREDFET MOS 5 1000 V 1 Ohm TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $15.3400
  • 100 $13.2200
  • 250 $12.7300
  • 500 $12.4300
  • 1,000 $12.1500
  • 5,000 $11.7600
$11.7600 / $15.3400 Buy Now
Future Electronics 1000v, 11A, 1.O OHM, TO-247 RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 1 Lead time: 32 Weeks Container: Bulk 0
Bulk
  • 1 $13.6100
  • 5 $13.4400
  • 25 $13.2600
  • 50 $13.1900
  • 150 $12.9700
$12.9700 / $13.6100 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 11A Continuous Drain (Id) @ 25°C - 1 Ohm @ 5.5A, 10V - TO-247-3 Package - Through Hole. RoHS: Compliant 14 In Stock
796 Factory Stock
  • 5 $20.4500
  • 25 $15.9200
  • 50 $15.5600
  • 100 $15.1900
  • 250 $15.0400
  • 500 $14.8900
  • 1,000 $14.7400
$14.7400 / $20.4500 Buy Now
DISTI # 83672554
Verical Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube Min Qty: 5 Package Multiple: 5 Date Code: 2312 Americas - 10
  • 5 $26.5850
  • 25 $20.6960
  • 50 $20.2280
  • 100 $19.7470
  • 250 $19.5520
$19.5520 / $26.5850 Buy Now
DISTI # APT1001RBVFRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1kV, 11A, Idm: 44A Min Qty: 1 0
  • 1 $22.0500
  • 3 $19.9400
  • 10 $17.7300
$17.7300 / $22.0500 RFQ
NAC FG, FREDFET, 1000V, TO-247, RoHS RoHS: Compliant Min Qty: 25 Package Multiple: 1 Container: Tube 0
  • 1 $14.6300
  • 100 $13.2700
  • 500 $12.4400
  • 1,000 $12.1300
$12.1300 / $14.6300 Buy Now
DISTI # APT1001RBVFRG
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 40 0
  • 40 $13.6700
  • 50 $13.3100
  • 100 $13.1400
$13.1400 / $13.6700 Buy Now
DISTI # APT1001RBVFRG
Avnet Silica Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 (Alt: APT1001RBVFRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 34 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT1001RBVFRG
EBV Elektronik Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 (Alt: APT1001RBVFRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 11A Continuous Drain (Id) @ 25°C - 1 Ohm @ 5.5A, 10V - TO-247-3 Package - Through Hole. RoHS: Compliant 14 In Stock
796 Factory Stock
  • 5 $20.4500
  • 25 $15.9200
  • 50 $15.5600
  • 100 $15.1900
  • 250 $15.0400
  • 500 $14.8900
  • 1,000 $14.7400
$14.7400 / $20.4500 Buy Now

CAD Models for APT1001RBVFRG by Microchip Technology Inc
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Part Data Attributes for APT1001RBVFRG by Microchip Technology Inc
Parametric Data

APT1001RBVFRG
Microchip Technology Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
Package Description
TO-247AD, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
32 Weeks
Samacsys Manufacturer
Microchip
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
44 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. APT1001RBVFRG
    Microchip Technology Inc
    Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    VS

Alternate Parts for APT1001RBVFRG

This table gives cross-reference parts and alternative options found for APT1001RBVFRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RBVFRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
APT1001RBVFR Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Microsemi Corporation APT1001RBVFRG vs APT1001RBVFR
Part Number Description Manufacturer Compare
IXFH12N90P Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Littelfuse Inc APT1001RBVFRG vs IXFH12N90P
SHD2396FS Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors APT1001RBVFRG vs SHD2396FS
IXFV12N100PS Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation APT1001RBVFRG vs IXFV12N100PS
IXFH12N100Q Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc APT1001RBVFRG vs IXFH12N100Q
IXFT12N90Q Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc APT1001RBVFRG vs IXFT12N90Q
APT10086BVFRG Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc APT1001RBVFRG vs APT10086BVFRG
APT10086BVR Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microsemi Corporation APT1001RBVFRG vs APT10086BVR
APT1001R1SN Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Advanced Power Technology APT1001RBVFRG vs APT1001R1SN
SHD2396F Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors APT1001RBVFRG vs SHD2396F
APT1001RBLC Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology APT1001RBVFRG vs APT1001RBLC

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