Part Details for BSM25GD120D2 by Siemens
Overview of BSM25GD120D2 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM25GD120D2
BSM25GD120D2 CAD Models
BSM25GD120D2 Part Data Attributes
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BSM25GD120D2
Siemens
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Datasheet
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BSM25GD120D2
Siemens
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-XUFM-D17 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 100 ns | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-D17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1200 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 130 ns | |
Surface Mount | NO | |
Terminal Form | SOLDER LUG | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 630 ns | |
Turn-off Time-Nom (toff) | 420 ns | |
Turn-on Time-Max (ton) | 150 ns | |
Turn-on Time-Nom (ton) | 75 ns | |
VCEsat-Max | 3 V |
Alternate Parts for BSM25GD120D2
This table gives cross-reference parts and alternative options found for BSM25GD120D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | BSM25GD120D2 vs CM30TF-24H |
MG25Q6ES42 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM25GD120D2 vs MG25Q6ES42 |
CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | BSM25GD120D2 vs CM30TF-24H |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM25GD120D2 vs BSM25GD120DN2E3224 |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | BSM25GD120D2 vs BSM25GD120DN2E3224 |
BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM25GD120D2 vs BSM25GD120DN2 |
MG25Q6ES50 | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM25GD120D2 vs MG25Q6ES50 |
6MBI25LB-120 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | BSM25GD120D2 vs 6MBI25LB-120 |
BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | BSM25GD120D2 vs BSM25GD120DN2 |