Part Details for CM30TF-24H by Powerex Power Semiconductors
Overview of CM30TF-24H by Powerex Power Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for CM30TF-24H
CM30TF-24H CAD Models
CM30TF-24H Part Data Attributes
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CM30TF-24H
Powerex Power Semiconductors
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Datasheet
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CM30TF-24H
Powerex Power Semiconductors
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | POWEREX INC | |
Package Description | FLANGE MOUNT, R-XUFM-X17 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 30 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 310 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.4 V |
Alternate Parts for CM30TF-24H
This table gives cross-reference parts and alternative options found for CM30TF-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM30TF-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MG25Q6ES42 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM30TF-24H vs MG25Q6ES42 |
CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | CM30TF-24H vs CM30TF-24H |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | CM30TF-24H vs BSM25GD120DN2E3224 |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | CM30TF-24H vs BSM25GD120DN2E3224 |
BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | CM30TF-24H vs BSM25GD120DN2 |
MG25Q6ES50 | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM30TF-24H vs MG25Q6ES50 |
6MBI25LB-120 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | CM30TF-24H vs 6MBI25LB-120 |
BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | CM30TF-24H vs BSM25GD120DN2 |
BSM25GD120D2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | CM30TF-24H vs BSM25GD120D2 |