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Transistors Power Field-Effect Transistors BUZ11A

BUZ11A
Description: Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of BUZ11A by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BUZ11A by Siemens

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 83
  • 1 $1.7825
  • 16 $1.4260
  • 54 $1.0695
$1.0695 / $1.7825 Buy Now
ComSIT USA N-CHANNEL 50V, 0.045OHM, 26A TO-220 STRIPFET MOSFET Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Stock EU - 10
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for BUZ11A by Siemens
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Part Data Attributes for BUZ11A by Siemens
Parametric Data

BUZ11A
Siemens
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SIEMENS A G
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
14 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
26 A
Drain-source On Resistance-Max
0.055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
250 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
104 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
270 ns
Turn-on Time-Max (ton)
110 ns
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  1. BUZ11A
    Siemens
    Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    VS

Alternate Parts for BUZ11A

This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ11A vs HUF75309P3
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ11A vs BUZ10
BUZ10 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG BUZ11A vs BUZ10
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ11A vs HUF75309P3_NL
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ11A vs RFP25N06
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ11A vs BUZ11A
BUZ10 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-220AB Freescale Semiconductor BUZ11A vs BUZ10
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs IRFZ30
BUZ10 Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ11A vs BUZ10
BUZ11A 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ11A vs BUZ11A
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BUZ11A vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi BUZ11A vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi BUZ11A vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group BUZ11A vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi BUZ11A vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation BUZ11A vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG BUZ11A vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUZ11A vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics BUZ11A vs STD30NE06

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