Datasheets
EDS5116ABTA-75-E by: Elpida Memory Inc

Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54

Part Details for EDS5116ABTA-75-E by Elpida Memory Inc

Overview of EDS5116ABTA-75-E by Elpida Memory Inc

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Applications Education and Research Aerospace and Defense Agriculture Technology Automotive Robotics and Drones

Part Details for EDS5116ABTA-75-E

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EDS5116ABTA-75-E Part Data Attributes:

EDS5116ABTA-75-E Elpida Memory Inc
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EDS5116ABTA-75-E Elpida Memory Inc Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for EDS5116ABTA-75-E

This table gives cross-reference parts and alternative options found for EDS5116ABTA-75-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS5116ABTA-75-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4SD32M16DGC-75/IT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DGC-75/IT
K4S511632B-UC75T Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Samsung Semiconductor EDS5116ABTA-75-E vs K4S511632B-UC75T
TC59SM916AFT-70 IC 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components EDS5116ABTA-75-E vs TC59SM916AFT-70
HM5257165BTD-75 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc EDS5116ABTA-75-E vs HM5257165BTD-75
AS4SD32M16DG-75/ET Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DG-75/ET
K4S511632B-UL750 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Samsung Semiconductor EDS5116ABTA-75-E vs K4S511632B-UL750
TC59SM916AFT-75 IC 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components EDS5116ABTA-75-E vs TC59SM916AFT-75
AS4SD32M16DGC-75/ET Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DGC-75/ET
AS4SD32M16DG-75/XT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DG-75/XT
AS4SD32M16DGCR-75/IT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DGCR-75/IT
Part Number Description Manufacturer Compare
AS4SD32M16DG-75/ET Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DG-75/ET
HYB39S512160ATL-7 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG EDS5116ABTA-75-E vs HYB39S512160ATL-7
K4S511632C-KL7C Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor EDS5116ABTA-75-E vs K4S511632C-KL7C
MT48LC32M16A2TG-7ELIT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc EDS5116ABTA-75-E vs MT48LC32M16A2TG-7ELIT
IS42S16320A-7T Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc EDS5116ABTA-75-E vs IS42S16320A-7T
IS45S16320D-6TLA1 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN Integrated Silicon Solution Inc EDS5116ABTA-75-E vs IS45S16320D-6TLA1
HY57V121620T-6 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc EDS5116ABTA-75-E vs HY57V121620T-6
AS4SD32M16DGC/XT Synchronous DRAM, 32MX16, CMOS, PDSO54, TSOP2-54 Micross Components EDS5116ABTA-75-E vs AS4SD32M16DGC/XT
K4S511632B-UL750 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Samsung Semiconductor EDS5116ABTA-75-E vs K4S511632B-UL750
HM5257165BTD-75 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc EDS5116ABTA-75-E vs HM5257165BTD-75

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