Datasheets
FDC6312P by:

2300mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6

Part Details for FDC6312P by Rochester Electronics LLC

Overview of FDC6312P by Rochester Electronics LLC

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Part Details for FDC6312P

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FDC6312P Part Data Attributes:

FDC6312P Rochester Electronics LLC
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FDC6312P Rochester Electronics LLC 2300mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT
Package Description SUPERSOT-6
Pin Count 6
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.3 A
Drain-source On Resistance-Max 0.115 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC6312P

This table gives cross-reference parts and alternative options found for FDC6312P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6312P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC6312P Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6312P vs FDC6312P
Part Number Description Manufacturer Compare
FDC6306PD84Z Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6312P vs FDC6306PD84Z
FDC6506P_NL Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6312P vs FDC6506P_NL
ZXM62P03E6TC Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Diodes Incorporated FDC6312P vs ZXM62P03E6TC
ZXM62P03E6TA Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Diodes Incorporated FDC6312P vs ZXM62P03E6TA
FDC6306P 1900mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC6312P vs FDC6306P
FDC6312P Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6312P vs FDC6312P
FDC6506P Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6312P vs FDC6506P
FDC6506P 1800mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC6312P vs FDC6506P
ZXM62P03E6 1600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 6 PIN Diodes Incorporated FDC6312P vs ZXM62P03E6
FDC6318P Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ, 3000-REEL onsemi FDC6312P vs FDC6318P

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