Part Details for FQT13N06LTF by Rochester Electronics LLC
Overview of FQT13N06LTF by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQT13N06LTF
FQT13N06LTF CAD Models
FQT13N06LTF Part Data Attributes:
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FQT13N06LTF
Rochester Electronics LLC
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Datasheet
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FQT13N06LTF
Rochester Electronics LLC
2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | SOT-223 | |
Package Description | SOT-223, 4 PIN | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 23 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQT13N06LTF
This table gives cross-reference parts and alternative options found for FQT13N06LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT13N06LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLL014NPBF | Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN | Infineon Technologies AG | FQT13N06LTF vs IRLL014NPBF |
IRLL014NTRPBF | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | FQT13N06LTF vs IRLL014NTRPBF |
IRLL014NTR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | FQT13N06LTF vs IRLL014NTR |
FQT13N06S62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06S62Z |
IRLL014N | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | FQT13N06LTF vs IRLL014N |
FQT13N06 | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06 |
FQT13N06LTF | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06LTF |
FQT13N06TF | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06TF |
FQT13N06LS62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06LS62Z |
FQT13N06LTF | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223, 4000-REEL | onsemi | FQT13N06LTF vs FQT13N06LTF |