-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FQT13N06LTF by onsemi
Overview of FQT13N06LTF by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FQT13N06LTF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85AC1807
|
Newark | Mosfet, N Ch, 60V, 2.8A, Sot-223-3, Transistor Polarity:N Channel, Continuous Drain Current Id:2.8A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.088Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Onsemi FQT13N06LTF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.2560 / $0.2870 | Buy Now |
|
DISTI #
27AC5845
|
Newark | Qf 60V 110Mohm L So223 Rohs Compliant: Yes |Onsemi FQT13N06LTF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2450 / $0.2900 | Buy Now |
|
DISTI #
31Y1561
|
Newark | Mosfet, N Ch, 60V, 2.8A, Sot-223-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi FQT13N06LTF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
73928934
|
RS | Transistor, N-channel, QFET MOSFET, 60V, 2.8A, 110 mOhm at VGS 10V, SOT-223 | ON Semiconductor FQT13N06LTF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
|
$0.6600 / $0.7300 | RFQ |
|
DISTI #
FQT13N06LTF
|
TME | Transistor: N-MOSFET, unipolar, 60V, 2.24A, Idm: 11.2A, 2.1W, SOT223 Min Qty: 1 | 0 |
|
$0.3280 / $1.0200 | RFQ |
Part Details for FQT13N06LTF
FQT13N06LTF CAD Models
FQT13N06LTF Part Data Attributes:
|
|
FQT13N06LTF
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQT13N06LTF
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223, 4000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SOT-223, 4 PIN | |
| Manufacturer Package Code | 318H-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.8 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQT13N06LTF
This table gives cross-reference parts and alternative options found for FQT13N06LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT13N06LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLL014NPBF | Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN | Infineon Technologies AG | FQT13N06LTF vs IRLL014NPBF |
| IRLL014NTRPBF | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | FQT13N06LTF vs IRLL014NTRPBF |
| IRLL014NTR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | FQT13N06LTF vs IRLL014NTR |
| FQT13N06S62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06S62Z |
| IRLL014N | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | FQT13N06LTF vs IRLL014N |
| FQT13N06 | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06 |
| FQT13N06LTF | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06LTF |
| FQT13N06TF | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06TF |
| FQT13N06LS62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT13N06LTF vs FQT13N06LS62Z |
| FQT13N06LTF | 2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN | Rochester Electronics LLC | FQT13N06LTF vs FQT13N06LTF |