Part Details for HY57V161610DTC-6 by SK Hynix Inc
Overview of HY57V161610DTC-6 by SK Hynix Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HY57V161610DTC-6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 132 |
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$2.7750 / $4.5000 | Buy Now |
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 13 |
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$2.2500 / $4.5000 | Buy Now |
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 8 |
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$2.2500 / $4.5000 | Buy Now |
Part Details for HY57V161610DTC-6
HY57V161610DTC-6 CAD Models
HY57V161610DTC-6 Part Data Attributes
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HY57V161610DTC-6
SK Hynix Inc
Buy Now
Datasheet
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HY57V161610DTC-6
SK Hynix Inc
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 167 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.968 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.12 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for HY57V161610DTC-6
This table gives cross-reference parts and alternative options found for HY57V161610DTC-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610DTC-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VG3617161ET-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | HY57V161610DTC-6 vs VG3617161ET-6 |
| NT56V1616A0T-7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Nanya Technology Corporation | HY57V161610DTC-6 vs NT56V1616A0T-7 |
| W9816G6CH-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | Winbond Electronics Corp | HY57V161610DTC-6 vs W9816G6CH-6 |
| IS45S16100E-7TLA2 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | HY57V161610DTC-6 vs IS45S16100E-7TLA2 |
| KM416S1120DT-F6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | HY57V161610DTC-6 vs KM416S1120DT-F6 |
| MT48LC1M16A1TG-6STR | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | HY57V161610DTC-6 vs MT48LC1M16A1TG-6STR |
| V54C317162VCT-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | HY57V161610DTC-6 vs V54C317162VCT-6 |
| MB81F161622B-60FN | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | HY57V161610DTC-6 vs MB81F161622B-60FN |
| K4S161622H-TC700 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | HY57V161610DTC-6 vs K4S161622H-TC700 |
| W9816G6CH-7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | Winbond Electronics Corp | HY57V161610DTC-6 vs W9816G6CH-7 |