Part Details for IRFR9110TRPBF by Vishay Siliconix
Overview of IRFR9110TRPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Medical Imaging
Price & Stock for IRFR9110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRFR9110PBFCT-ND
|
DigiKey | MOSFET P-CH 100V 3.1A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7257 In Stock |
|
$0.4430 / $1.1800 | Buy Now |
|
DISTI #
70615848
|
RS | IRFR9110TRPBF P-channel MOSFET Transistor, 3.1 A, 100 V, 3-Pin TO-252 | Siliconix / Vishay IRFR9110TRPBF RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Container: Bulk | 0 |
|
$1.0000 / $1.1800 | RFQ |
Part Details for IRFR9110TRPBF
IRFR9110TRPBF CAD Models
IRFR9110TRPBF Part Data Attributes:
|
|
IRFR9110TRPBF
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
IRFR9110TRPBF
Vishay Siliconix
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR9110TRPBF
This table gives cross-reference parts and alternative options found for IRFR9110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9110TRLPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110TRLPBF |
| IRFR9110TRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110TRPBF |
| IRFR9110 | Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR9110TRPBF vs IRFR9110 |
| IRFR9110TRL | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9110TRPBF vs IRFR9110TRL |
| IRFR9110TRLPBF | TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9110TRPBF vs IRFR9110TRLPBF |
| IRFR9110PBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110PBF |
| IRFR9110TRL | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRFR9110TRPBF vs IRFR9110TRL |
| IRFR9110 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110 |
| IRFR91109A | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | IRFR9110TRPBF vs IRFR91109A |
| SIHFR9110TR-GE3 | TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9110TRPBF vs SIHFR9110TR-GE3 |