Part Details for IRFR9110TRPBF by Vishay Intertechnologies
Overview of IRFR9110TRPBF by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Medical Imaging
Price & Stock for IRFR9110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2286
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Newark | Mosfet, P Ch, -100V, -3.1A, To-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.1A, Drain Source Voltage Vds:-100V, On Resistance Rds(On):1.2Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Vishay IRFR9110TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 4531 |
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$0.5860 / $0.9280 | Buy Now |
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DISTI #
69W7154
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Newark | Mosfet, P Channel, -100V, -3.1A, To-252-3, Transistor Polarity:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3.1A, On Resistance Rds(On):1.2Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay IRFR9110TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7770 | Buy Now |
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DISTI #
31K2029
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Newark | P Channel Mosfet, -100V, 3.1A D-Pak, Full Reel, Transistor Polarity:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3.1A, On Resistance Rds(On):1.2Ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:4Vrohs Compliant: Yes |Vishay IRFR9110TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6470 | Buy Now |
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DISTI #
844-IRFR9110TRPBF
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Mouser Electronics | MOSFETs TO252 100V 3.1A P-CH MOSFET RoHS: Compliant | 3990 |
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$0.5420 / $1.3600 | Buy Now |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 2000Reel |
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$0.3800 / $0.4050 | Buy Now |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3800 / $0.4050 | Buy Now |
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Bristol Electronics | 226 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 100V, 1.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 180 |
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$0.3675 / $0.7350 | Buy Now |
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DISTI #
IRFR9110TRPBF
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TTI | MOSFETs TO252 100V 3.1A P-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 4000 In Stock |
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$0.4340 | Buy Now |
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DISTI #
IRFR9110TRPBF
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Avnet Asia | MOSFET P-CHANNEL 100V (Alt: IRFR9110TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days | 0 |
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RFQ |
Part Details for IRFR9110TRPBF
IRFR9110TRPBF CAD Models
IRFR9110TRPBF Part Data Attributes
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IRFR9110TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR9110TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR9110TRPBF
This table gives cross-reference parts and alternative options found for IRFR9110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9110TRLPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR9110TRPBF vs IRFR9110TRLPBF |
| IRFR9110TRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR9110TRPBF vs IRFR9110TRPBF |
| IRFR9110PBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR9110TRPBF vs IRFR9110PBF |
| IRFR9110PBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110PBF |
| IRFR91109A | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | IRFR9110TRPBF vs IRFR91109A |
| IRFR91109A | 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | IRFR9110TRPBF vs IRFR91109A |
| IRFR9110 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR9110TRPBF vs IRFR9110 |
| IRFR9110TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110TRRPBF |
| IRFR9110 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | IRFR9110TRPBF vs IRFR9110 |
| IRFR9110 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR9110TRPBF vs IRFR9110 |