Part Details for IS42S32200-6TLI by Integrated Silicon Solution Inc
Overview of IS42S32200-6TLI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS42S32200-6TLI
IS42S32200-6TLI CAD Models
IS42S32200-6TLI Part Data Attributes
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IS42S32200-6TLI
Integrated Silicon Solution Inc
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Datasheet
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IS42S32200-6TLI
Integrated Silicon Solution Inc
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP86,.46,20 | |
| Pin Count | 86 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for IS42S32200-6TLI
This table gives cross-reference parts and alternative options found for IS42S32200-6TLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32200-6TLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V643220CT-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | IS42S32200-6TLI vs HY57V643220CT-6 |
| HY57V643220DTP-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | IS42S32200-6TLI vs HY57V643220DTP-6 |
| HY57V643220DT-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | IS42S32200-6TLI vs HY57V643220DT-6 |
| HY57V643220CT-6I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | IS42S32200-6TLI vs HY57V643220CT-6I |
| K4S643232H-UC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, | Samsung Semiconductor | IS42S32200-6TLI vs K4S643232H-UC60 |
| K4S643232F-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | IS42S32200-6TLI vs K4S643232F-TC60 |
| K4S643232H-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | Samsung Semiconductor | IS42S32200-6TLI vs K4S643232H-TC60 |
| HY57V653220BTC-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | IS42S32200-6TLI vs HY57V653220BTC-6 |
| IS42S32200E-6TL-TR | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | IS42S32200-6TLI vs IS42S32200E-6TL-TR |
| K4S643232H-UC600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 | Samsung Semiconductor | IS42S32200-6TLI vs K4S643232H-UC600 |