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Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LTC6090HS8E-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6090IFE-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6078CDD#PBF | Analog Devices | uP Prec, 2x CMOS R2R In/Out Am |
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 192 |
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RFQ | ||
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Quest Components | SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP | 303 |
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$2.4000 / $6.0000 | Buy Now |
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Quest Components | SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP | 153 |
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$3.7000 / $6.0000 | Buy Now |
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K4S643232F-TC60
Samsung Semiconductor
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Datasheet
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K4S643232F-TC60
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSSOP86,.46,20 | |
Pin Count | 86 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Samacsys Manufacturer | SAMSUNG | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G86 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 86 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSSOP86,.46,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.15 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
This table gives cross-reference parts and alternative options found for K4S643232F-TC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232F-TC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY57V643220CT-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232F-TC60 vs HY57V643220CT-6 |
HY57V643220DTP-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | K4S643232F-TC60 vs HY57V643220DTP-6 |
HY57V643220DT-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232F-TC60 vs HY57V643220DT-6 |
HY57V643220CT-6I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | K4S643232F-TC60 vs HY57V643220CT-6I |
K4S643232H-UC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, | Samsung Semiconductor | K4S643232F-TC60 vs K4S643232H-UC60 |
K4S643232H-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | Samsung Semiconductor | K4S643232F-TC60 vs K4S643232H-TC60 |
IS42S32200-6TLI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232F-TC60 vs IS42S32200-6TLI |
HY57V653220BTC-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232F-TC60 vs HY57V653220BTC-6 |
IS42S32200E-6TL-TR | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232F-TC60 vs IS42S32200E-6TL-TR |
K4S643232H-UC600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 | Samsung Semiconductor | K4S643232F-TC60 vs K4S643232H-UC600 |