There are no models available for this part yet.
Overview of IXTA86N20T by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTA86N20T by IXYS Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
747-IXTA86N20T
|
Mouser Electronics | MOSFETs 86 Amps 200V 29 Rds | 0 |
|
$2.9900 / $3.1300 | Order Now | |
| Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
|
$3.4000 | Buy Now | ||
|
DISTI #
IXTA86N20T
|
TTI | MOSFETs 86 Amps 200V 29 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$2.9000 / $3.0200 | Buy Now | |
|
DISTI #
IXTA86N20T
|
TME | Transistor: N-MOSFET, unipolar, 200V, 86A, 550W, TO263, 140ns Min Qty: 1 | 0 |
|
$3.7700 / $5.2800 | RFQ |
CAD Models for IXTA86N20T by IXYS Corporation
Part Data Attributes for IXTA86N20T by IXYS Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
IXYS CORP
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
PLASTIC, TO-263, 3 PIN
|
|
Pin Count
|
4
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
1000 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
200 V
|
|
Drain Current-Max (ID)
|
86 A
|
|
Drain-source On Resistance-Max
|
0.029 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-263AB
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
260 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IXTA86N20T
This table gives cross-reference parts and alternative options found for IXTA86N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA86N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTA86N20T vs IXTP86N20T |
| IXFK88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTA86N20T vs IXFK88N20Q |
| IXFX88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXTA86N20T vs IXFX88N20Q |
| IXTQ86N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXTA86N20T vs IXTQ86N20T |
| IXFK88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXTA86N20T vs IXFK88N20Q |
| IXTA86N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXTA86N20T vs IXTA86N20T |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXYS Corporation | IXTA86N20T vs IXFX80N20Q |
| IXFK80N20S | Power Field-Effect Transistor, 80A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | IXYS Corporation | IXTA86N20T vs IXFK80N20S |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | Littelfuse Inc | IXTA86N20T vs IXFX80N20Q |