Datasheets
IXTA86N20T by:

Power Field-Effect Transistor,

Part Details for IXTA86N20T by Littelfuse Inc

Overview of IXTA86N20T by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTA86N20T

Part # Distributor Description Stock Price Buy
DISTI # 03AH1427
Newark Discmsft Nchtrenchgate-Gen1 To-263D2/ Tube |Littelfuse IXTA86N20T Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $4.1400
  • 500 $3.7700
  • 1,000 $3.3300
  • 2,500 $3.0900
$3.0900 / $4.1400 Buy Now
DISTI # IXTA86N20T-ND
DigiKey MOSFET N-CH 200V 86A TO263 Min Qty: 1 Lead time: 27 Weeks Container: Tube 116
In Stock
  • 1 $4.1800
  • 50 $3.3120
  • 100 $2.8389
  • 500 $2.7767
$2.7767 / $4.1800 Buy Now

Part Details for IXTA86N20T

IXTA86N20T CAD Models

IXTA86N20T Part Data Attributes

IXTA86N20T Littelfuse Inc
Buy Now Datasheet
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IXTA86N20T Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 86 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 73 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 550 W
Pulsed Drain Current-Max (IDM) 260 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA86N20T

This table gives cross-reference parts and alternative options found for IXTA86N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA86N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXTA86N20T vs IXFK88N20Q
IXFK88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Littelfuse Inc IXTA86N20T vs IXFK88N20Q
IXTQ86N20T Power Field-Effect Transistor, Littelfuse Inc IXTA86N20T vs IXTQ86N20T
IXFX80N20Q Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 IXYS Corporation IXTA86N20T vs IXFX80N20Q
IXFK80N20S Power Field-Effect Transistor, 80A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA IXYS Corporation IXTA86N20T vs IXFK80N20S
IXTP86N20T Power Field-Effect Transistor, Littelfuse Inc IXTA86N20T vs IXTP86N20T
IXTQ86N20T Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation IXTA86N20T vs IXTQ86N20T
IXFX88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Littelfuse Inc IXTA86N20T vs IXFX88N20Q

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