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Transistors Power Field-Effect Transistors IXTP86N20T

Transistors
IXTP86N20T
Description: Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Overview of IXTP86N20T by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTP86N20T by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTP86N20T
Mouser Electronics MOSFETs 86 Amps 200V 29 Rds RoHS: Compliant 845
  • 1 $5.9800
  • 10 $5.0200
  • 50 $4.7300
  • 100 $4.0200
  • 250 $3.9200
  • 500 $3.5000
  • 1,000 $2.9000
$2.9000 / $5.9800 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.2700
$3.2700 Buy Now
DISTI # IXTP86N20T
TTI MOSFETs 86 Amps 200V 29 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $3.8800
  • 500 $3.5000
  • 1,000 $2.8700
$2.8700 / $3.8800 Buy Now
DISTI # IXTP86N20T
TME Transistor: N-MOSFET, unipolar, 200V, 86A, 550W, TO220AB, 140ns Min Qty: 1 0
  • 1 $5.0700
  • 3 $4.5600
  • 10 $4.0300
  • 50 $3.6200
$3.6200 / $5.0700 RFQ
New Advantage Corporation MOSFET DIS.86A 200V N-CH TO220AB TRENCH RoHS: Compliant Min Qty: 1 Package Multiple: 100 212
  • 100 $6.6700
  • 212 $6.2300
$6.2300 / $6.6700 Buy Now

CAD Models for IXTP86N20T by IXYS Corporation
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Part Data Attributes for IXTP86N20T by IXYS Corporation
Parametric Data

IXTP86N20T
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-220AB
Package Description
PLASTIC, TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1000 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
86 A
Drain-source On Resistance-Max
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
260 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTP86N20T
    IXYS Corporation
    Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
    VS

Alternate Parts for IXTP86N20T

This table gives cross-reference parts and alternative options found for IXTP86N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP86N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXFK88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Littelfuse Inc IXTP86N20T vs IXFK88N20Q
IXFX88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Littelfuse Inc IXTP86N20T vs IXFX88N20Q
IXTQ86N20T Power Field-Effect Transistor, Littelfuse Inc IXTP86N20T vs IXTQ86N20T
IXFK88N20Q Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXTP86N20T vs IXFK88N20Q
IXTA86N20T Power Field-Effect Transistor, Littelfuse Inc IXTP86N20T vs IXTA86N20T
IXFX80N20Q Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 IXYS Corporation IXTP86N20T vs IXFX80N20Q
IXTA86N20T Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN IXYS Corporation IXTP86N20T vs IXTA86N20T
IXFK80N20S Power Field-Effect Transistor, 80A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA IXYS Corporation IXTP86N20T vs IXFK80N20S
IXFX80N20Q Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 Littelfuse Inc IXTP86N20T vs IXFX80N20Q

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