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Part Details for IXTP86N20T by Littelfuse Inc
Overview of IXTP86N20T by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTP86N20T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1721
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Newark | Discmsft Nchtrenchgate-Gen1 To-220Ab/Fp/ Tube |Littelfuse IXTP86N20T Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.9700 / $3.9800 | Buy Now |
|
DISTI #
IXTP86N20T-ND
|
DigiKey | MOSFET N-CH 200V 86A TO220AB Min Qty: 1 Lead time: 27 Weeks Container: Tube |
346 In Stock |
|
$2.9099 / $5.9800 | Buy Now |
Part Details for IXTP86N20T
IXTP86N20T CAD Models
IXTP86N20T Part Data Attributes
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IXTP86N20T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP86N20T
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 86 A | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 73 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 550 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP86N20T
This table gives cross-reference parts and alternative options found for IXTP86N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP86N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTA86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXTP86N20T vs IXTA86N20T |
| IXFK80N20S | Power Field-Effect Transistor, 80A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | IXYS Corporation | IXTP86N20T vs IXFK80N20S |
| IXTQ86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXTP86N20T vs IXTQ86N20T |
| IXFX88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXTP86N20T vs IXFX88N20Q |
| IXFK88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP86N20T vs IXFK88N20Q |
| IXTP86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTP86N20T vs IXTP86N20T |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | Littelfuse Inc | IXTP86N20T vs IXFX80N20Q |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXYS Corporation | IXTP86N20T vs IXFX80N20Q |
| IXFX88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXTP86N20T vs IXFX88N20Q |
| IXFT80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXYS Corporation | IXTP86N20T vs IXFT80N20Q |