Part Details for IXTQ86N20T by IXYS Corporation
Overview of IXTQ86N20T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXTQ86N20T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTQ86N20T
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Mouser Electronics | MOSFET 86 Amps 200V 29 Rds RoHS: Compliant | 0 |
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$4.0600 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$3.6900 | Buy Now |
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DISTI #
IXTQ86N20T
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TTI | MOSFET 86 Amps 200V 29 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$4.0200 | Buy Now |
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DISTI #
IXTQ86N20T
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TME | Transistor: N-MOSFET, unipolar, 200V, 86A, 550W, TO3P, 140ns Min Qty: 1 | 0 |
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$3.9900 / $5.5800 | RFQ |
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New Advantage Corporation | MOSFET DIS.86A 200V N-CH TO3P TRENCH THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 220 |
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$7.4700 / $8.0100 | Buy Now |
Part Details for IXTQ86N20T
IXTQ86N20T CAD Models
IXTQ86N20T Part Data Attributes:
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IXTQ86N20T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTQ86N20T
IXYS Corporation
Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-3P | |
| Package Description | PLASTIC, TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 86 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ86N20T
This table gives cross-reference parts and alternative options found for IXTQ86N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ86N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXYS Corporation | IXTQ86N20T vs IXFT80N20Q |
| IXTP86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTQ86N20T vs IXTP86N20T |
| IXFK88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXTQ86N20T vs IXFK88N20Q |
| IXTA86N20T | Power Field-Effect Transistor, 86A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXTQ86N20T vs IXTA86N20T |
| IXFK88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTQ86N20T vs IXFK88N20Q |
| IXTA86N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXTQ86N20T vs IXTA86N20T |
| IXFX88N20Q | Power Field-Effect Transistor, 88A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXTQ86N20T vs IXFX88N20Q |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | Littelfuse Inc | IXTQ86N20T vs IXFX80N20Q |
| IXTP86N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXTQ86N20T vs IXTP86N20T |
| IXFX80N20Q | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXYS Corporation | IXTQ86N20T vs IXFX80N20Q |