K4H510438C-ZCB3
Samsung Semiconductor
Description: DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60,

Overview of K4H510438C-ZCB3 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage

Price & Stock for K4H510438C-ZCB3 by Samsung Semiconductor

Part # Manufacturer Description Stock Price Buy
Quest Components 128M X 4 DDR DRAM, 0.7 ns, 60 Pin Plastic BGA 17
Buy Now

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Part Data Attributes for K4H510438C-ZCB3 by Samsung Semiconductor

K4H510438C-ZCB3
Samsung Semiconductor
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Time-Max
0.7 ns
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PBGA-B60
JESD-609 Code
e1
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Memory Width
4
Moisture Sensitivity Level
3
Number of Terminals
60
Number of Words
134217728 words
Number of Words Code
128000000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX4
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA60,9X12,40/32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.36 mA
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
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  1. K4H510438C-ZCB3
    Samsung Semiconductor
    DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60,
    VS

Alternate Parts for K4H510438C-ZCB3

This table gives cross-reference parts and alternative options found for K4H510438C-ZCB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438C-ZCB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H510438C-ZLB30 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510438C-ZCB3 vs K4H510438C-ZLB30
V58C2512404SAJ6 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SAJ6
K4H510438C-ZLB3 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 Samsung Semiconductor K4H510438C-ZCB3 vs K4H510438C-ZLB3
V58C2512404SAS6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SAS6
K4H510438C-ZCB3T DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 Samsung Semiconductor K4H510438C-ZCB3 vs K4H510438C-ZCB3T
V58C2512404SALS6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SALS6
V58C2512404SALJ6 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SALJ6
V58C2512404SAF6 Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SAF6
Part Number Description Manufacturer Compare
MT47H128M4JN-3EAT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3 vs MT47H128M4JN-3EAT:F
V59C1512404QDLF19AH DDR DRAM, 128MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V59C1512404QDLF19AH
MT47H128M4F6-25:D DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3 vs MT47H128M4F6-25:D
V58C2512404SBF5 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V58C2512404SBF5
MT47H128M4CF-25AT:F DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H510438C-ZCB3 vs MT47H128M4CF-25AT:F
V59C1512404QDUP5E DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V59C1512404QDUP5E
V59C1512404QDUP19AI DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V59C1512404QDUP19AI
MT47H128M4CF-3ELAT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H510438C-ZCB3 vs MT47H128M4CF-3ELAT:F
MT47H128M4F6-25EL:D DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc K4H510438C-ZCB3 vs MT47H128M4F6-25EL:D
V59C1512404QCLF-37 DDR DRAM, 128MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510438C-ZCB3 vs V59C1512404QCLF-37

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