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K4H510438C-ZCB3
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 2.5 V | 700 ps | 166 MHz | 8192 | DDR1 DRAM | COMMON | 2,4,8 | 128000000 | 134.2177 M | 3-STATE | 2,4,8 | 5 mA | 360 µA | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e1 | 3 | 70 °C | 260 | 60 | PLASTIC/EPOXY | BGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | ||||||||||||||||
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K4H510438C-ZCB30
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 2.5 V | 700 ps | 166 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 5 mA | 360 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e1 | 3 | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | BGA | TFBGA, BGA60,9X12,40/32 | 60 | ||||
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K4H510438C-ZCB3T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 2.5 V | 700 ps | 166 MHz | 8192 | DDR1 DRAM | COMMON | 2,4,8 | 128000000 | 134.2177 M | 3-STATE | 2,4,8 | 5 mA | 360 µA | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e3 | 1 | 70 °C | 60 | PLASTIC/EPOXY | BGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY | YES | MATTE TIN | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | BGA, BGA60,9X12,40/32 |