Datasheets
KM416C254DT-4 by: Samsung Semiconductor

EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40

Part Details for KM416C254DT-4 by Samsung Semiconductor

Overview of KM416C254DT-4 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for KM416C254DT-4

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 1044
  • 2 $4.4800
  • 7 $2.9120
  • 19 $2.2400
  • 57 $2.0908
  • 121 $1.9412
  • 246 $1.8368
$1.8368 / $4.4800 Buy Now
Quest Components   768
  • 1 $6.0000
  • 68 $2.8000
  • 180 $2.6000
$2.6000 / $6.0000 Buy Now
Quest Components   318
  • 1 $7.2000
  • 53 $4.4400
  • 226 $3.9600
$3.9600 / $7.2000 Buy Now

Part Details for KM416C254DT-4

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KM416C254DT-4 Part Data Attributes

KM416C254DT-4 Samsung Semiconductor
Buy Now Datasheet
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KM416C254DT-4 Samsung Semiconductor EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP40/44,.46,32
Pin Count 44
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 40 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G40
JESD-609 Code e0
Length 18.41 mm
Memory Density 4194304 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 40
Number of Words 262144 words
Number of Words Code 256000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP40/44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 512
Seated Height-Max 1.2 mm
Self Refresh NO
Standby Current-Max 0.001 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for KM416C254DT-4

This table gives cross-reference parts and alternative options found for KM416C254DT-4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416C254DT-4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V53C16258HT40 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 Mosel Vitelic Corporation KM416C254DT-4 vs V53C16258HT40
Part Number Description Manufacturer Compare
V53C16258SHT40 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 Mosel Vitelic Corporation KM416C254DT-4 vs V53C16258SHT40
MT4C16270DJ-4 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Micron Technology Inc KM416C254DT-4 vs MT4C16270DJ-4
VG264265CJ-4 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Vanguard International Semiconductor Corporation KM416C254DT-4 vs VG264265CJ-4
VG264265BJ-40 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Vanguard International Semiconductor Corporation KM416C254DT-4 vs VG264265BJ-40
HYB514265BJ-40 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Infineon Technologies AG KM416C254DT-4 vs HYB514265BJ-40
V53C16258HK40I EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation KM416C254DT-4 vs V53C16258HK40I
IS41C16256-40KI EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 Integrated Silicon Solution Inc KM416C254DT-4 vs IS41C16256-40KI
HYB514265BJ-400 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Infineon Technologies AG KM416C254DT-4 vs HYB514265BJ-400
KM416C254DJ-L4 EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 Samsung Semiconductor KM416C254DT-4 vs KM416C254DJ-L4
IS41C16256-40T EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Integrated Silicon Solution Inc KM416C254DT-4 vs IS41C16256-40T

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