Part Details for M12L128168A-7TG2S by Elite Semiconductor Memory Technology Inc
Overview of M12L128168A-7TG2S by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for M12L128168A-7TG2S
M12L128168A-7TG2S CAD Models
M12L128168A-7TG2S Part Data Attributes
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M12L128168A-7TG2S
Elite Semiconductor Memory Technology Inc
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M12L128168A-7TG2S
Elite Semiconductor Memory Technology Inc
DRAM,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Date Of Intro | 2017-08-18 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 143 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.19 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for M12L128168A-7TG2S
This table gives cross-reference parts and alternative options found for M12L128168A-7TG2S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L128168A-7TG2S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS4C4M16S-6TAN | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | M12L128168A-7TG2S vs AS4C4M16S-6TAN |
| HY57V651620BLTC-75 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | M12L128168A-7TG2S vs HY57V651620BLTC-75 |
| AS4C4M16SA-6TINTR | IC SDRAM 64MBIT 166MHZ 54TSOP | Alliance Memory Inc | M12L128168A-7TG2S vs AS4C4M16SA-6TINTR |
| HYB39S64160ETL-7.5 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | M12L128168A-7TG2S vs HYB39S64160ETL-7.5 |
| V54C36516G4VT7 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | M12L128168A-7TG2S vs V54C36516G4VT7 |
| K4S641632H-UC750 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | Samsung Semiconductor | M12L128168A-7TG2S vs K4S641632H-UC750 |
| AS4C4M16S-6TANTR | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | M12L128168A-7TG2S vs AS4C4M16S-6TANTR |
| V54C465164VEI6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, GREEN, TSOP2-54 | ProMOS Technologies Inc | M12L128168A-7TG2S vs V54C465164VEI6 |
| V54C465164VELT7 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 | ProMOS Technologies Inc | M12L128168A-7TG2S vs V54C465164VELT7 |
| M2V64S40DTP-6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | M12L128168A-7TG2S vs M2V64S40DTP-6 |