Datasheets
SFP2955 by:

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SFP2955 by Samsung Semiconductor

Overview of SFP2955 by Samsung Semiconductor

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Part Details for SFP2955

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SFP2955 Part Data Attributes:

SFP2955 Samsung Semiconductor
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SFP2955 Samsung Semiconductor Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 151 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 49 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SFP2955

This table gives cross-reference parts and alternative options found for SFP2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFP2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75617D3S 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SFP2955 vs HUF75617D3S
FQI6N50TU 5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 Rochester Electronics LLC SFP2955 vs FQI6N50TU
FQPF30N06 21A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC SFP2955 vs FQPF30N06
SPU08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens SFP2955 vs SPU08P06P
IRF840R 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC SFP2955 vs IRF840R
2SK3062-ZJ Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN NEC Electronics Group SFP2955 vs 2SK3062-ZJ
2SJ660 Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN SANYO Electric Co Ltd SFP2955 vs 2SJ660
FQP13N06 13A, 60V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SFP2955 vs FQP13N06
FDH27N50 27A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Rochester Electronics LLC SFP2955 vs FDH27N50
FQPF13N50C 13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN Rochester Electronics LLC SFP2955 vs FQPF13N50C

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