Part Details for STE250NS10 by STMicroelectronics
Overview of STE250NS10 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STE250NS10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1752062
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Farnell | MOSFET, N CH, 100V, 220A, ISOTOP RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each | 0 |
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$19.0645 / $30.2783 | Buy Now |
Part Details for STE250NS10
STE250NS10 CAD Models
STE250NS10 Part Data Attributes
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STE250NS10
STMicroelectronics
Buy Now
Datasheet
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STE250NS10
STMicroelectronics
220A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | ISOTOP | |
| Package Description | ROHS COMPLIANT, ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 220 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Pulsed Drain Current-Max (IDM) | 880 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STE250NS10
This table gives cross-reference parts and alternative options found for STE250NS10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STE250NS10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTN210P10T | Power Field-Effect Transistor, | Littelfuse Inc | STE250NS10 vs IXTN210P10T |
| IXFN150N10 | Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | Littelfuse Inc | STE250NS10 vs IXFN150N10 |
| APT10M07JVR | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | Microsemi Corporation | STE250NS10 vs APT10M07JVR |
| IXFN150N10 | Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | STE250NS10 vs IXFN150N10 |
| APT10M07JVR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | STE250NS10 vs APT10M07JVR |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | STE250NS10 vs APT10M07JVFR |
| IXFN200N10P | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | STE250NS10 vs IXFN200N10P |
| MTE215N10E | 215A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | STE250NS10 vs MTE215N10E |
| STE180N10 | 180A, 100V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | STMicroelectronics | STE250NS10 vs STE180N10 |
| IXFN280N085 | Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | STE250NS10 vs IXFN280N085 |