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Memory DRAMs AS4C32M16SB-7BINTR

AS4C32M16SB-7BINTR
Alliance Memory Inc
Description: Synchronous DRAM,

Overview of AS4C32M16SB-7BINTR by Alliance Memory Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for AS4C32M16SB-7BINTR by Alliance Memory Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 85AK6987
Newark Sdr, 512Mb, 32M X 16, 3.3V, 54-Ball Fbga, 143Mhz, Industrial Temp, B Die, t&r |Alliance Memory AS4C32M16SB-7BINTR RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $17.3000
  • 5,000 $17.1000
$17.1000 / $17.3000 Buy Now
DISTI # 1450-AS4C32M16SB-7BINTR-ND
DigiKey IC DRAM 512MBIT PAR 54FBGA Min Qty: 2500 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $11.4552
$11.4552 Buy Now
DISTI # AS4C32M16SB-7BINTR
Avnet Americas DRAM Chip SDRAM 512M-bit 32Mx16 3.3V 54-Pin TSOP-II T/R - Tape and Reel (Alt: AS4C32M16SB-7BINTR) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $10.8990
$10.8990 Buy Now
DISTI # 913-S4C32M16SB7BINTR
Mouser Electronics DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die,T&R RoHS: Compliant 0
  • 2,500 $11.1200
$11.1200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $10.8200
$10.8200 Buy Now
DISTI # AS4C32M16SB-7BINTR
Avnet Silica DRAM Chip SDRAM 512M-bit 32Mx16 3.3V 54-Pin TSOP-II T/R (Alt: AS4C32M16SB-7BINTR) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now

CAD Models for AS4C32M16SB-7BINTR by Alliance Memory Inc
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Part Data Attributes for AS4C32M16SB-7BINTR by Alliance Memory Inc
Parametric Data

AS4C32M16SB-7BINTR
Alliance Memory Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ALLIANCE MEMORY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Factory Lead Time
8 Weeks
Date Of Intro
2020-03-11
Samacsys Manufacturer
Alliance Memory
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Clock Frequency-Max (fCLK)
143 MHz
I/O Type
COMMON/SEPARATE
Interleaved Burst Length
1,2,4,8
JESD-30 Code
S-PBGA-B54
Length
8 mm
Memory Density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA54,9X9,32
Package Shape
SQUARE
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.008 A
Standby Voltage-Min
3 V
Supply Current-Max
0.12 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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Alternate Parts for AS4C32M16SB-7BINTR

This table gives cross-reference parts and alternative options found for AS4C32M16SB-7BINTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C32M16SB-7BINTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AS4C32M16SB-7BIN Synchronous DRAM, Alliance Memory Inc AS4C32M16SB-7BINTR vs AS4C32M16SB-7BIN
Part Number Description Manufacturer Compare
IS42S16320F-7TL Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 Integrated Silicon Solution Inc AS4C32M16SB-7BINTR vs IS42S16320F-7TL
K4S511632M-TL1H Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C32M16SB-7BINTR vs K4S511632M-TL1H
MT48H32M16LFTG-8IT Synchronous DRAM, 32MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc AS4C32M16SB-7BINTR vs MT48H32M16LFTG-8IT
IS45S16320F-7BLA2 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, TFBGA-54 Integrated Silicon Solution Inc AS4C32M16SB-7BINTR vs IS45S16320F-7BLA2
K4S511632D-KL1L Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C32M16SB-7BINTR vs K4S511632D-KL1L
HYB39S512160AT-8 Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C32M16SB-7BINTR vs HYB39S512160AT-8
K4S511632M-TC1L Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C32M16SB-7BINTR vs K4S511632M-TC1L
IS45S16320F-7TLA2 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 Integrated Silicon Solution Inc AS4C32M16SB-7BINTR vs IS45S16320F-7TLA2
AS4SD32M16DGC-75/IT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components AS4C32M16SB-7BINTR vs AS4SD32M16DGC-75/IT
HYB39S512160ATL-8 Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C32M16SB-7BINTR vs HYB39S512160ATL-8

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