Part Details for AUIRFR5410 by Infineon Technologies AG
Overview of AUIRFR5410 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRFR5410
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | AUIRFR5410 - 20V-150V P-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 8 |
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$0.6610 / $0.7776 | Buy Now |
DISTI #
1865612
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Farnell | MOSFET,W DIODE,P CH,100V,13A,DPAK RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Each | 0 |
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$0.7089 / $1.0270 | Buy Now |
Part Details for AUIRFR5410
AUIRFR5410 CAD Models
AUIRFR5410 Part Data Attributes:
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AUIRFR5410
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRFR5410
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ROHS COMPLIANT, PLASTIC, DPAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 194 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.205 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 66 W | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRFR5410
This table gives cross-reference parts and alternative options found for AUIRFR5410. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR5410, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR5410TRLPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | AUIRFR5410 vs IRFR5410TRLPBF |
AUIRFR5410TRR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR5410 vs AUIRFR5410TRR |
IRFR5410TRR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3 | International Rectifier | AUIRFR5410 vs IRFR5410TRR |
AUIRFR5410TR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR5410 vs AUIRFR5410TR |
IRFR5410TR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3 | International Rectifier | AUIRFR5410 vs IRFR5410TR |
IRFR5410HR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRFR5410 vs IRFR5410HR |
IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | Infineon Technologies AG | AUIRFR5410 vs IRFR5410TRPBF |
IRFR5410PBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | Infineon Technologies AG | AUIRFR5410 vs IRFR5410PBF |
IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | AUIRFR5410 vs IRFR5410TRPBF |
AUIRFR5410TRL | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRFR5410 vs AUIRFR5410TRL |