Part Details for FDI8441 by Fairchild Semiconductor Corporation
Overview of FDI8441 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for FDI8441
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 80A, 40V, 0.0047ohm, N-Channel Power MOSFET, TO-262AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 87407 |
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$1.4500 / $1.7100 | Buy Now |
Part Details for FDI8441
FDI8441 CAD Models
FDI8441 Part Data Attributes:
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FDI8441
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDI8441
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 80A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO262, JEDEC VARIATION AA (I2PAK) | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 947 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AB | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDI8441
This table gives cross-reference parts and alternative options found for FDI8441. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDI8441, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP80N04S2L-04 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDI8441 vs SPP80N04S2L-04 |
| IPI80N04S3-H4 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDI8441 vs IPI80N04S3-H4 |
| SPB80N04S2L-04 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDI8441 vs SPB80N04S2L-04 |
| IPP80N04S4-04 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDI8441 vs IPP80N04S4-04 |
| IPI80N04S3H4AKSA1 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDI8441 vs IPI80N04S3H4AKSA1 |
| IPP80N04S404AKSA1 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDI8441 vs IPP80N04S404AKSA1 |