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Transistors Power Field-Effect Transistors FDZ208P

Transistors
FDZ208P
Description: 12.5A, 30V, 0.0105ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30

Overview of FDZ208P by Rochester Electronics LLC

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 6 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for FDZ208P by Rochester Electronics LLC
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Part Data Attributes for FDZ208P by Rochester Electronics LLC
Parametric Data

FDZ208P
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
BGA
Package Description
ULTRA THIN, BGA-30
Pin Count
30
Reach Compliance Code
unknown
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
12.5 A
Drain-source On Resistance-Max
0.0105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PBGA-B30
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
30
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
NOT SPECIFIED
Terminal Form
BALL
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDZ208P
    Rochester Electronics LLC
    12.5A, 30V, 0.0105ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30
    VS

Alternate Parts for FDZ208P

This table gives cross-reference parts and alternative options found for FDZ208P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDZ208P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDMC6679AZ Power Field-Effect Transistor, 11.5A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC6679AZ
FDZ206P 13A, 20V, 0.0095ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30 Rochester Electronics LLC FDZ208P vs FDZ206P
FDMC7692S Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7692S
FDMC7692 Power Field-Effect Transistor, 13.3A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7692
FDMC7672S Power Field-Effect Transistor, 14.8A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7672S
FDMC7672 Power Field-Effect Transistor, 16.9A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7672

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