Part Details for H55S5162DFR-60M by SK Hynix Inc
Overview of H55S5162DFR-60M by SK Hynix Inc
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- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for H55S5162DFR-60M
H55S5162DFR-60M CAD Models
H55S5162DFR-60M Part Data Attributes:
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H55S5162DFR-60M
SK Hynix Inc
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Datasheet
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H55S5162DFR-60M
SK Hynix Inc
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA54,9X9,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | S-PBGA-B54 | |
| JESD-609 Code | e1 | |
| Length | 10 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -30 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.1 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H55S5162DFR-60M
This table gives cross-reference parts and alternative options found for H55S5162DFR-60M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H55S5162DFR-60M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS42R16320D-6BLI | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, TFBGA-54 | Integrated Silicon Solution Inc | H55S5162DFR-60M vs IS42R16320D-6BLI |
| K4M511633C-RF1H0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4M511633C-RF1H0 |
| W989D6CBGX7E | DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-54 | Winbond Electronics Corp | H55S5162DFR-60M vs W989D6CBGX7E |
| K4M51163PC-RF1L0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4M51163PC-RF1L0 |
| K4S511533F-YL1H0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4S511533F-YL1H0 |
| MT48H32M16LFBN-75IT | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 10 X 12.50 MM, VFBGA-54 | Micron Technology Inc | H55S5162DFR-60M vs MT48H32M16LFBN-75IT |
| K4M511633C-RG1L0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4M511633C-RG1L0 |
| MT48H32M16LGBF-75:B | 32MX16 SYNCHRONOUS DRAM, 5.4ns, PBGA54, 8 X 9 MM, GREEN, VFBGA-54 | Micron Technology Inc | H55S5162DFR-60M vs MT48H32M16LGBF-75:B |
| K4M51163LE-PF1L0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4M51163LE-PF1L0 |
| K4S51153PF-YF1L0 | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | H55S5162DFR-60M vs K4S51153PF-YF1L0 |