Part Details for HUF75309P3 by Intersil Corporation
Overview of HUF75309P3 by Intersil Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF75309P3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 193 |
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$0.5063 / $1.3500 | Buy Now |
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Quest Components | 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 154 |
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$0.5400 / $1.8000 | Buy Now |
Part Details for HUF75309P3
HUF75309P3 CAD Models
HUF75309P3 Part Data Attributes:
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HUF75309P3
Intersil Corporation
Buy Now
Datasheet
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Compare Parts:
HUF75309P3
Intersil Corporation
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 45 W | |
Power Dissipation-Max (Abs) | 45 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 70 ns |
Alternate Parts for HUF75309P3
This table gives cross-reference parts and alternative options found for HUF75309P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ10 | 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | HUF75309P3 vs BUZ10 |
BUZ11A | 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | HUF75309P3 vs BUZ11A |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | HUF75309P3 vs IRFZ30 |
RFP25N06 | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | HUF75309P3 vs RFP25N06 |
RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | HUF75309P3 vs RFP25N06 |
BUZ10 | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | HUF75309P3 vs BUZ10 |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | HUF75309P3 vs IRFZ30 |
HUF75309P3 | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | HUF75309P3 vs HUF75309P3 |
HUF75309P3 | 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | HUF75309P3 vs HUF75309P3 |
RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | HUF75309P3 vs RFP25N06 |