There are no models available for this part yet.
Overview of JAN1N5461B by Cobham PLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 9 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
CAD Models for JAN1N5461B by Cobham PLC
Part Data Attributes for JAN1N5461B by Cobham PLC
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
KNOX SEMICONDUCTORS INC
|
|
Part Package Code
|
DO-7
|
|
Package Description
|
O-LALF-W2
|
|
Pin Count
|
2
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.10.00.80
|
|
Breakdown Voltage-Min
|
30 V
|
|
Case Connection
|
ISOLATED
|
|
Configuration
|
SINGLE
|
|
Diode Cap Tolerance
|
5%
|
|
Diode Capacitance Ratio-Min
|
2.7
|
|
Diode Capacitance-Nom
|
6.8 pF
|
|
Diode Element Material
|
SILICON
|
|
Diode Type
|
VARIABLE CAPACITANCE DIODE
|
|
JEDEC-95 Code
|
DO-7
|
|
JESD-30 Code
|
O-LALF-W2
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-65 °C
|
|
Package Body Material
|
GLASS
|
|
Package Shape
|
ROUND
|
|
Package Style
|
LONG FORM
|
|
Power Dissipation-Max
|
0.4 W
|
|
Qualification Status
|
Not Qualified
|
|
Quality Factor-Min
|
600
|
|
Reference Standard
|
MIL
|
|
Rep Pk Reverse Voltage-Max
|
30 V
|
|
Reverse Current-Max
|
2e-8 µA
|
|
Reverse Test Voltage
|
25 V
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
WIRE
|
|
Terminal Position
|
AXIAL
|
|
Variable Capacitance Diode Classification
|
ABRUPT
|
Alternate Parts for JAN1N5461B
This table gives cross-reference parts and alternative options found for JAN1N5461B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5461B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7 | Microsemi Corporation | JAN1N5461B vs 1N5461B |
| 1N5461B | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt | Msi Electronics Inc | JAN1N5461B vs 1N5461B |
| JANTX1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2 | CRYSTALONICS Inc | JAN1N5461B vs JANTX1N5461B |
| 1N5461B | 6.8pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 | Aeroflex Inc | JAN1N5461B vs 1N5461B |
| JANTX1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham Semiconductor Solutions | JAN1N5461B vs JANTX1N5461B |
| 1N5461B | Variable Capacitance Diode, 7pF C(T), 45V, Silicon, DO-7 | International Semiconductor Inc | JAN1N5461B vs 1N5461B |
| 1N5461B | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7 | Lockheed Martin Microwave | JAN1N5461B vs 1N5461B |
| JANTXV1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham Semiconductor Solutions | JAN1N5461B vs JANTXV1N5461B |
| 1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2 | CRYSTALONICS Inc | JAN1N5461B vs 1N5461B |